| PART |
Description |
Maker |
| UGF1005G UGF1004G UGF1006G |
10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF2001GA SFF2002GA SFF2003GA |
20.0 Amperes Insulated Dual Common Anode Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF2001GD SFF2002GD SFF2003GD |
20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| PM200CSE060 |
FLAT-BASE TYPE INSULATED INSULATED PACKAGE 平性基地型绝缘绝缘包装
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| BTA12-600CW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| BTA12-600BW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PM50RSD060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM25CLA12005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| HTP12A60 |
NON INSULATED TYPE TRIAC (TO-220 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| PM50RSE120 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
